| PART |
Description |
Maker |
| BC369-10 |
16Mb EDO/FPM - OBSOLETE 晶体
|
SIEMENS AG
|
| T2316405A |
(T2316405A / T2316407A) EDO/FPM DRAM
|
Taiwan Memory Technology
|
| IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM
2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HY |
4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns
4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns
-3.3V 4M x 4-Bit Dynamic RAM
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MT4LC1M16C3TG-6S MT4LC1M16C3DJ-6S |
FPM DRAM 快速页面模式的DRAM
|
Micron Technology, Inc.
|
| HYB3164165BTL-60 HYB3164165BTL-50 HYB3164165BTL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
