| PART |
Description |
Maker |
| MSG33001 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| MSG43004 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| SGA8343Z SGA8343ZPCK1 SGA8343ZPCK2 SGA8343ZPCK3 SG |
LOW NOISE, HIGH GAIN SiGe HBT
|
RF Micro Devices
|
| NESG3031M05-T1-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
|
California Eastern Labs
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NESG210833 NESG210833-A NESG210833-T1B NESG210833- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| NESG220034 NESG220034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| NESG220034-A NESG220034-T1 NESG220034-T1-A NESG220 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
| RQL1001JLTL-E RQL1001JLAQH |
SiGe MMIC High Frequency Low Noise Amplifier
|
http://
RENESAS[Renesas Electronics Corporation]
|
| MAX2645EUB MAX2645 |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver
|
MAXIM[Maxim Integrated Products]
|
| MAX2644 MAX2644EXT-T MAX264403 |
2.4GHz SiGe, High IP3 Low-Noise Amplifier
2.4GHz SiGe / High IP3 Low-Noise Amplifier
|
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| MAX2645 |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver
|
MAXIM - Dallas Semiconductor
|
