| PART |
Description |
Maker |
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| AT49BV8192A-11CI |
EEPROM|FLASH|512KX16/1MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Air Cost Control
|
| UPD29F800ALGZ-C15B-MJH UPD29F800ALGZ-C15T-MJH UPD2 |
XWAY™ TANTOS
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information | Information[10/2002]
EEPROM|FLASH|512KX16/1MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | TSSOP封装| 48PIN |塑料
|
NEC, Corp.
3M Company
|
| KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC
From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
| S29GL016A10FAIR10 S29GL016A30FAIR10 S29GL032A10FAI |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
http://
|
| WS512K16-25DLM WS512K16-20DLC WS512K16-20DLCA WS51 |
512Kx16 SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| EM39LV80090Y EM39LV800 EM39LV80055RD EM39LV80055RH |
8M Bits (512Kx16) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
| AT45BR3214B AT45BR3214B-C1 |
32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
|
Atmel Corp.
|
| EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI |
1Mx8 Static RAM CMOS, Module
|
White Electronic Designs Corporation
|
