| PART |
Description |
Maker |
| 1-1123624-5 |
Dynamic Series Connectors; DYNAMIC D-3200 HDR H 9P K-XXX ( AMP )
|
Tyco Electronics
|
| 2-1939995-0 |
Dynamic Series Connectors; DYNAMIC D1100D SMT-HDR V 40P BLACK Y ( Tyco Electronics )
|
Tyco Electronics
|
| IC41C16105 IC41LV16105 IC41LV16105-60TI IC41C16105 |
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 100万166兆）动态RAM的快速页面模
DYNAMIC RAM, FPM DRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ICSI
ETC[ETC]
Integrated Circuit Solution Inc
|
| IC41SV44052 IC41SV44054 IC41SV44052-70J IC41SV4405 |
DYNAMIC RAM, FPM DRAM
4Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
http://
|
| HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM)
2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| Q67100-Q527 Q67100-Q1056 Q67100-Q519 Q67100-Q518 Q |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM 1个M × 1位动态随机存储器的低功个M位动态随机存储器
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
1 M x 1-Bit Dynamic RAM Low Power 1 M ′ 1-Bit Dynamic RAM
|
SIEMENS AG
Siemens Semiconductor Group
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No
4,194,304 WORD x BIT DYNAMIC RAM
4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LTC3201 LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2 |
RF Power Detector with Buffered Output and 40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C 300 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, 18 dBm INPUT POWER-MAX
|
LINER[Linear Technology]
Linear Technology, Corp.
|
