| PART |
Description |
Maker |
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IGW40N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| FS50R06KE3 |
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
| FP50R06KE3 |
EconoPIM2 module with the trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
| FP50R06KE3G |
EconoPIM3 module with the trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
| FS200R06KE3 |
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
| FF200R17KE3 FF200R17KE307 |
62mm C-series module with trench/fieldstop IGBT and EmCon diode
|
eupec GmbH
|
| SIGC54T60R3 Q67050-A4341-A101 |
IGBT-3 Chip
For drives-, white goods and resonant applications, Trench- and Fieldstop technology
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| IHW15T120 |
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| FP35R12W2T4B11 |
EasyPIM2B module PressFIT with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode
54 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
| IKW75N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
