| PART |
Description |
Maker |
| IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm
1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| L279106 |
Infrared LED Small emission spot LED using current confined chip
|
Hamamatsu Corporation
|
