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AM-7650-1 - 64MF 8M SRAM, BOT BOOT 85NS CBGA IND(FLASH) 64MF 8M SRAM, TOP BOOT 85NS CBGA IND(FLASH)

AM-7650-1_3264409.PDF Datasheet


 Full text search : 64MF 8M SRAM, BOT BOOT 85NS CBGA IND(FLASH) 64MF 8M SRAM, TOP BOOT 85NS CBGA IND(FLASH)
 Product Description search : 64MF 8M SRAM, BOT BOOT 85NS CBGA IND(FLASH) 64MF 8M SRAM, TOP BOOT 85NS CBGA IND(FLASH)


 Related Part Number
PART Description Maker
UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
Maxim Integrated Products, Inc.
5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 59 Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
Aeroflex Circuit Technology
WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 100ns; 512K x 8 monolithic SRAM, SMD 5962-95613
120ns; 512K x 8 monolithic SRAM, SMD 5962-95613
70ns; 512K x 8 monolithic SRAM, SMD 5962-95613
85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
White Electronic Designs
LRS1383H STACKED CHIP 32M (X 16) BOOT BLOCK FLASH AND 8M (X 16) SRAM
Sharp Electrionic Components
LRS1387 64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
SHARP
HM62V256LFP-8ULT HM62V256LTM-8UL 32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns
Hitachi Semiconductor
TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 (TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128K X 8 STATIC RAM CMOS MONOLITHIC
CAPACITOR 150UF 200V ELECT TSHA
128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM,贴962-89598
CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598
CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598
CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598
CAPACITOR 1200UF 200V ELECT TSHA
100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
White Electronic Designs
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
A81L801 A81L801UG-70F A81L801TG-70F Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
AMIC Technology Corporation
PS9617 PS9617L-V-E4-A PS9617-A PS9617L PS9617L-A P GIGATRUE 550 CAT PATCH CABLE NO BOOT 7FT BLACK 高噪音减少,高速数字输出型8引脚DIP光耦合
GIGATRUE 550 CAT PATCH CBL NO BOOT 1FT BK 25 PK 高噪音减少,高速数字输出型8引脚DIP光耦合
HIGH NOISE REDUCTION, HIGH SPEED DIGITAL OUTPUT TYPE 8-PIN DIP PHOTOCOUPLER 高噪音减少,高速数字输出型8引脚DIP光耦合
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, BLACK
GIGATRUE 550 CAT PATCH CABLE NO BOOT 3FT BLACK
GIGATRUE 550 CAT PATCH CBL NO BOOT 100F PK 25 PK
GIGATRUE 550 CAT PATCH CABLE NO BOOT 7FT BLACK
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
M36W216 M36W216BI M36W216BI70ZA1T M36W216BI85ZA1T 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
STMICROELECTRONICS[STMicroelectronics]
 
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