| PART |
Description |
Maker |
| C106D |
Thyristors logic level
|
Philips
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BT148W-600R BT148W BT148W-400R BT148W-500R |
Thyristors logic level(可控硅逻辑电平)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BT258X-600R BT258X_SERIES_2 BT258X BT258X-800R BT2 |
Thyristors logic level
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BT168GW |
Thyristors; logic level for RCD/GFI/LCCB applications
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BT168 BT168B BT168D BT168E BT168G BT168SERIES |
Thyristors logic level for RCD/ GFI/ LCCB applications
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BT258U-600R127 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005
|
NXP SEMICONDUCTORS
|
| BT168GW_3 BT168GW |
Thyristors logic level for RCD/GFI/LCCB applications
From old datasheet system
|
Philips
|
| MAC08MT1G |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
|
ON Semiconductor
|
| PMV60EN PMV60EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
3M SCOTCHCAST ELECTRICAL RESIN 5 (16 1-LB UNITS = CARTON) RoHS Compliant: Yes
UTrenchMOS enhanced logic level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| FDN361 FDN361AN |
N-Channel/ Logic Level/ PowerTrench
N-Channel, Logic Level, PowerTrenchビヌ
N-Channel, Logic Level, PowerTrenchΤΜ
|
Fairchild Semiconductor Corporation
|
