| PART |
Description |
Maker |
| BL3207A BL3207B |
024-stage low voltage operation and low noise BBD variable delay line
|
SHANGHAI BELLING
|
| IDT72V70810 IDT72V70810PF IDT72V70810TF IDT72V7081 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 1,024 x 1,024
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V
|
Integrated Device Technology
IDT
|
| MN3210 |
DUAL 512-STAGE LOW VOLTAGE OPERATION LOW NOISE BBD
|
Panasonic Semiconductor
|
| MN3206 |
128-STAGE LOW VOLTAGE OPERATION LOW NOISE BBD
|
PANASONIC[Panasonic Semiconductor]
|
| MN3207 |
1024-Stage Low Voltage Operation / Low Noise BBD for Analog Signal Delays
|
Panasonic Semiconductor
|
| MN3207 |
1024-Stage Low Voltage Operation, Low Noise BBD for Analog Signal Delays
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| KS24C010 KS24C021 KS24C011 KS24C020 |
1.024 / 2.048-BIT SERIAL EEPROM
1,024/2,048-bit serial eeprom 1,024 / 2,048位串行EEPROM
(KS24C010 / KS24C011 / KS24C020 / KS24C021) 1024/2048-bit serial eeprom
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V
3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 11C 11#16 SKT RECP BOX RM
3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9
3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9
GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32
GT 7C 7#16S PIN RECP
3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 8C 8#16 SKT RECP WALL
GT 3C 3#16S PIN RECP WALL
GT 4C 4#12 PIN PLUG
3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| HUFA75329S3S HUFA75329G3 HUFA75329P3 HUFA75329S3ST |
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 49A, 0.024 Ohms @ VGS = 10V TO-263/D2PAK Package
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
49A 55V 0.024 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD822 2SD882 2SD882P 2SD882Q |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|叩| 30V的五（巴西）总裁| 3A条一（c）|26
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
NPN(for the output stage of 3 watts audio amplifier/ voltage regulator/ DC-DC converter and relay driver)
NPN SILICON POWER TRANSISTOR
NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver)
|
NEC Corp.
NEC[NEC]
|
|
