| PART |
Description |
Maker |
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M39P0R1080E4ZASE M39P0R1080E4ZASF M39P0R9080E4 M39 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| AT43USB326 |
USB Multimedia keyboard controller with an embedded two part hub, 3 programmable end points. 16 Kbytes program ROM, 512 bytes SRAM and support for multiple 18 x 8 keyboard matrix.
|
Atmel
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| S9736 |
CCD area image sensor 512 512 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Photonics
|
| LH5496HU-80 LH5496U-80 LH5496HD-20 LH5496-20 LH549 |
CMOS 512 X 9 FIFO 512 × 9的CMOS先进先出
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| H3YN-41-Z H3YN-2-Z H3YN-21 H3YN-21-Z H3YN-4-Z OMRO |
Solid-state Timer (Miniature Timer with Multiple Time Ranges and Multiple Operating Modes) 固态定时器（小型定时器多时间和多种经营模式
|
Omron Electronics, LLC
|
| EMC1413-3-AIZL-TR EMC1414-A-AIZL-TR EMC1413-1-AIZL |
Multiple Channel 1 Temperature Sensors with Beta Compensation
|
SMSC Corporation
|
| M72DW64000B90ZT M72DW64000B M72DW64000B70ZT M72DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
