| PART |
Description |
Maker |
| GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU- |
These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology. 这些芯片型LED的利用铝铟镓磷化物（磷化铝铟镓）材料技术
|
International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
|
| WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CGB7017-SC0609 |
DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier 直流8.0千兆赫的InGaP HBT，单片或包装符合增益模块放大
|
Mimix Broadband, Inc.
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TQ7125 |
824-849 MHz, Cellular AMPS/TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TriQuint Semiconductor
|
| TQ7625 |
1850-1910 MHz, PSC TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TRIQUINT[TriQuint Semiconductor]
|
| CHP2299 |
CHP2299 is an InGaP HBT amplifier module offering high performance for WCDMA wireless handsets.
WCDMA InGaP HBT Amplifier Module
|
Anadigics Inc
|
| D5006-24 D5006-36 DVF4559-04 |
60 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
130 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
|
SKYWORKS SOLUTIONS INC
|
| GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
