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CEU01N6 - 600V N Channel MOS

CEU01N6_3193710.PDF Datasheet


 Full text search : 600V N Channel MOS
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PART Description Maker
APT6030 APT6030BVFR POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT6027HVR POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT60M75L2LL POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
APT6029BLL POWER MOS 7 600V 21A 0.290 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
APT60M75JFLL POWER MOS 7 600V 58A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
APT6010JFLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
Advanced Power Technology
APT6013JLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 39A 0.130 Ohm
Advanced Power Technology, Ltd.
APT60M60JLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET
POWER MOS 7 600V 70A 0.060 Ohm
Advanced Power Technology, Ltd.
STGB3NB60SD STGB3NB60SDT4 N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
APT6025BFLL APT6025SFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
Advanced Power Technology, Ltd.
 
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