| PART |
Description |
Maker |
| TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| CY7C1049CV33 CY7C1049CV33-15ZXC CY7C1049CV33-10VC |
4-Mbit (512K x 8) Static RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 Static RAM 12k × 8静态RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| MS52C1162A MS52C1161A |
65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM
131,072-Word X 8-Bit STATIC RAM 2,097,152-Word X 8-Bit One Time PROM
From old datasheet system
|
OKI
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| W24V04 |
512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
|
Winbond Electronics Corp
|
| CY62148EV30LL-45ZSXA |
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 2.20 to 3.60 V; 512K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| CY7C1049BNV33-12VI CY7C1049BNV33-12VXC CY7C1049BNV |
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 20 ns, PDSO36
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CY62148 CY62148-70SC CY62148LL-70SC CY62148V CY621 |
512K x 8 MoBL Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
Quadruple 2-Input Positive-OR Gate 14-TSSOP -40 to 85
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
