| PART |
Description |
Maker |
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM（江户）家庭
4M X 4 CMOS Quad CAS DRAM (EDO) family
4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| HY5118164CSLTC-60 HY5116164CJC-80 |
1M X 16 EDO DRAM, 60 ns, PDSO44
1M X 16 EDO DRAM, 80 ns, PDSO42
|
HYNIX SEMICONDUCTOR INC
|
| HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J |
1M X 16 EDO DRAM, 60 ns, PDSO44
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
|
ELPIDA MEMORY INC
|
| HYM564214AH-60 HYM572103LN-70 HYNIXSEMICONDUCTORIN |
2M X 64 EDO DRAM MODULE, DMA200
1M X 72 FAST PAGE DRAM MODULE, DMA168
2M X 64 FAST PAGE DRAM MODULE, DMA72
1M X 64 EDO DRAM MODULE, DMA72
2M X 32 EDO DRAM MODULE, DMA72
|
HYNIX SEMICONDUCTOR INC
|
