| PART |
Description |
Maker |
| MAX4223/4228 |
1GHz Low-Power SOT23 Current-Feedback Amplifiers with Shutdown
|
Maxim Integrated Products, Inc.
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SA601DK SA601 |
Low voltage LNA and mixer - 1GHz
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SA631DK SA631 |
1GHz low voltage LNA and mixer
From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
| SA601 |
Low voltage LNA and mixer - 1GHz
From old datasheet system
|
Philips
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| EIA1415B-8P |
14.9-15.1GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1718A-1P |
17.3-18.1GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| AM42-0039_1 AM42-0039 AM42-00391 |
2Watt C-Band VSAT Power Amplifier 5.9-7.1GHz
|
MACOM[Tyco Electronics]
|
