| PART |
Description |
Maker |
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| MSN3402 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN3400L |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSP3401 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
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|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| FDN372S |
30V N-Channel PowerTrenchSyncFET 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench SyncFET
|
Fairchild Semiconductor, Corp.
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| FDB8160 FDB8160-F085 FDB8160F085 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30V, 80A, 1.8mΩ
|
Fairchild Semiconductor
|
| FDMS8670AS08 FDMS8670AS |
N-Channel PowerTrench垄莽 SyncFET TM 30V, 42A, 3.0m楼?
N-Channel PowerTrench庐 SyncFET TM 30V, 42A, 3.0m惟
N-Channel PowerTrench? SyncFET TM 30V, 42A, 3.0mΩ
|
Fairchild Semiconductor
|
