| PART |
Description |
Maker |
| SMF-06020 |
Power Optimized GaAs FET
|
Samsung Electronics
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET
From old datasheet system
L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
| SI4884DY |
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET 0.01 ohm, Si, POWER, FET
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| CFK2162-P3 |
Power GaAs FET
|
Celeritek
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGF0909A_1 MGF0909A MGF0909A1 |
L,S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM0910-8 |
MICROWAVE POWER GaAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
