| PART |
Description |
Maker |
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| 2SK1085-M |
N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| APT4015AVR |
POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8015JVFR APT8015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| 2SK3218-01 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 40 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
