| PART |
Description |
Maker |
| FMW-2204 FMW-24H FMW-24L MPE-24H AW04 AE04 SFPE-64 |
From old datasheet system
Schottky Barrier Diodes 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
Schottky Barrier Diodes 2 A, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes 1 A, SILICON, SIGNAL DIODE
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
http://
|
| MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| NSR1020MW2T3G NSR1020MW2T1G |
Schottky Barrier Diode(肖特基势垒二极管) 1 A, 30 V, SILICON, SIGNAL DIODE
Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE
Schottky Barrier Diode
|
ON Semiconductor
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| HSCH-3486 HSCH3486 |
ZERO BIAS SCHOTTKY DIODE SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor
ASI
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT54SWT1G BAT54CWT1G |
Schottky Barrier diode
Schottky Diodes 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装，高可靠性的应用（共阳极）（双肖特基势垒二极管（高可靠性应用，TO258金属封装，共阳极连接））
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接))
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
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