| PART |
Description |
Maker |
| FMM7G30US60SI |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMM7G30US60I |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMM7G20US60N |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMS6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G20US60S |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMC6G10US60 |
IGBT
Compact & Complex Module
Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
Fairchild Semiconductor Corporation
|
| FMC7G30US60 |
IGBT
Compact & Complex Module
Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| PS21865 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,20A I(C)
|
Mitsubishi Electric & Electronics USA
|
| RTP21005-11 |
This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
|
RFHIC
|
| MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|7A我（丙）
|
Cooper Bussmann, Inc.
|
| EDI8F32256C EDI8F32256C-MN EDI8G32256C-MM |
256Kx32 Static RAM CMOS, High Speed Module(256Kx32高速CMOS静态RAM模块)
SRAM Modules
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
3M Company
|
