| PART |
Description |
Maker |
| W971GG6JB-18 W971GG6JB-3A W971GG6JB-25 W971GG6JB25 |
8M X 8 BANKS X 16 BIT DDR2 SDRAM
|
Winbond
|
| W972GG8JB-3 W972GG8JB25I |
32M x 8 BANKS x 8 BIT DDR2 SDRAM
|
Winbond
|
| W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
| W971GG6JB W971GG6JB25I |
8M ?8 BANKS ?16 BIT DDR2 SDRAM
DLL aligns DQ and DQS transitions with clock, Auto Refresh and Self Refresh modes, Write Data Mask
|
Winbond
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
| W986408CH |
2M x 8 bit x 4 Banks SDRAM
|
Winbond Electronics
|
| HYB18T512160AC-3.7 HYB18T512160AC-5 HYB18T512400AC |
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 400 (3-3-3) Available 2Q04
|
Infineon
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
