| PART |
Description |
Maker |
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| PHI214-0851 PH1214-0.85L |
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz
1200-1400 MHz,0.85 W, 2 ms pulse,radar pulsed power transistor
|
Tyco Electronics
MA-Com
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| NBSG16MNR2 NBSG16MN NBSG16BAR2 NBSG16BAEVB NBSG16B |
2.5 V/3.3 V SiGe Differential Receiver/Driver with RSECL Outputs
From old datasheet system
2.5V/3.3V SiGe Differential Receiver/Driver with RSECLOutputs
|
ONSEMI[ON Semiconductor]
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| AM83135-030 2771 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Red; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM82731-025 2768 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| HMC430LP4E HMC430LP408 |
MMIC VCO w/ BUFFER AMPLIFIER, 5.0 - 5.5 GHz
VCO, 5000 MHz - 5500 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corporati...
|
| MAX9995 MAX9995ETX-T MAX9995ETX MAX9995ETX-TD MAX9 |
Dual / SiGe / High-Linearity / 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
From old datasheet system
Dual SiGe High-Linearity 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
Hex 2-Input NOR Drivers 20-CDIP -55 to 125
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 双通道，锗，高线性度700MHz2200MHz下变频混频器，LO缓冲开
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| VCO690-3100T VCO690-3100TY |
VCO, 3000 MHz - 3200 MHz
VCO Product Specification
|
SIRENZA MICRODEVICES INC
|
