| PART |
Description |
Maker |
| RA45H8994M1 RA45H8994M1-101 RA45H8994M108 |
RF MOSFET MODULE 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| SM08790-45LDL |
869-896 MHz 30 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| SM08790-47LDL |
869-896 MHz 50 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| XC3S400AN-4FG484C XC3S400AN-4FG676C XC3S400AN-4FGG |
FPGA, 896 CLBS, 400000 GATES, 667 MHz, PBGA484 FBGA-484
FPGA, 896 CLBS, 400000 GATES, 667 MHz, PBGA676 FBGA-676
FPGA, 896 CLBS, 400000 GATES, 667 MHz, PBGA676 ROHS COMPLIANT, FBGA-676
FPGA, 896 CLBS, 400000 GATES, 667 MHz, PBGA484 ROHS COMPLIANT, FBGA-484
FPGA, 896 CLBS, 400000 GATES, 667 MHz, PQFP144 TQFP-144
FPGA, 896 CLBS, 400000 GATES, 667 MHz, PQFP144 ROHS COMPLIANT, TQFP-144
|
Xilinx, Inc.
|
| EMK13H2H-16.896M |
OSCILLATORS 50PPM -40 85 3.3V 4 16.896MHZ TS HCMOS 5X7 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 16.896 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| BSM35GD120D2 035D12D2 C67076-A2506-A17 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
From old datasheet system
|
TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
