| PART |
Description |
Maker |
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR
晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 18A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 8A条（丁）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 8A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|3A条（丁）|47
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五（巴西）直| 22A条（丁）|04AA
|
ECM Electronics, Ltd.
Fairchild Semiconductor, Corp.
|
| STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五（巴西）直|甲（丁）|52
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件
STD2N50-1 I-PAK MOSFET-TRANSIT
N-CHANNEL MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| DUI230S DU1230S |
RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz
RF MOSFET Power Transistor锛?30 W锛?12V锛?2 -175 MHz
RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz 射频MOSFET功率晶体管，3OW2V - 175兆赫
RF MOSFET Power Transistor30 W12V2 -175 MHz 射频MOSFET功率晶体管，30瓦，12V的，2 -175兆赫
RF MOSFET Power Transistor/ 3OW/ 12V 2 - 175 MHz
|
Hubbell Wiring Device-Kellems
TE Connectivity, Ltd.
Tyco Electronics
|
| IRLC130 IRFC214R IRFC9014R IRFC254R IRFC054R IRFC2 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 100V的五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 200伏五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 400V五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 100V的五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 200伏五（巴西）决策支持系统|芯片
|
ITT, Corp.
Amphenol, Corp.
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 6.7AI（四）|63AB
|
Sumida, Corp.
|
| IRFU320A IRFR320A |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 3.1AI（四）|52AA
|
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