| PART |
Description |
Maker |
| P6MU-2415EH52 P6MU-0505EH52 P6MU-0512EH52 P6MU-120 |
Input voltage:5V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:5V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 15V (67mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
5.2 KV ISOLATED 1W UNREGULATED SINGLE OUTPUT DIP14 5.2千伏隔震1W的未稳压单输出DIP14
|
http://
PEAK[PEAK electronics GmbH]
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五（DRM）的|00VAR75
THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五（DRM）的|00AE
|
Dynex Semiconductor, Ltd.
Fairchild Semiconductor, Corp.
|
| IRKVF180-08HKN IRKTF180-08HKN IRKLF180-12HKN IRKNF |
THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|180A I(T)
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|CA|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|180A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|180A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|180A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 180A我（翻译
|
Ironwood Electronics
|
| CAS300M12BM2 |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module
|
Cree, Inc
|
| TYN1225 |
SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),16A I(T),TO-220
From old datasheet system
|
ST Microelectronics
|
| IRKT430-20 |
THYRISTOR MODULE|SCR DOUBLER|2KV V(RRM)|430A I(T) 晶闸管模块|可控硅倍增| 2kV的五（无线资源管理）| 430A我（翻译
|
International Rectifier, Corp.
|
| F300R06KF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 300一（c）|模块
|
Vishay Intertechnology, Inc.
|
| F15A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 15A I(C) | TO-247 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|5A一（c）|47
|
Panasonic Industrial Solutions
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
| GP1600FSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.6KA I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 1.6KA一（c
|
Dynex Semiconductor, Ltd.
|
| IXGP15N120B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）| TO - 220AB现有
|
Maxim Integrated Products
|
