| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| VDS6632A4A-6 VDS6632A4A VDS6632A4A-5 VDS6632A4A-55 |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
Synchronous DRAM(512K X 32 Bit X 4 Banks) 同步DRAM12k × 32的位× 4个银行）
|
A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
|
| K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W9864G2JH |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
| W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K × 2 BANKS × 16 BITS SDRAM
|
Winbond
|
| W981616BH |
512K 2 BANKS 16 BITS SDRAM
|
Winbond
|
| VT361716 |
512K X 2 BANKS X 16 BITS SDRAM
|
Kreton
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| HY67V161610D HY67V161610DTC HY67V161610DTC-10 HY67 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
| HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
