| PART |
Description |
Maker |
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C)
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
| PM30RHC060 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
Intellimod-3 Modules: Three Phase Brake, IGBT Inverter Output 30 Amp, 110-230 Volt Line
|
Powerex Power Semiconductors
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Diodes, Inc.
|
| VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Aimtec
|
