| PART |
Description |
Maker |
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC5945 2SC5945TR-E |
Si NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE677M04-T2-A |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 中功率NPN硅高频晶体管
|
California Eastern Laboratories, Inc.
|
| 2SC5347 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications 高频半功率输出级，低噪声输出放大器中的应
High-Frequency Semi-Power Output Stage/ Low-Noise Medium Output Amplifiers Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| CPH6002 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| QVS212CG010BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R7BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R6BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
