| PART |
Description |
Maker |
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| CPD80V |
Chip Form: HIGH VOLTAGE SWITCHING DIODE
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| KTX303U |
EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC3405 E000840 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| HV200F04 HV200F042CL2FD |
High speed switching
4.0kV 200mA HIGH VOLTAGE DIODE
|
getedz electronics
GETAI ELECTRONICS DEVIC...
|
| HV200F06 HV200F062CL2FE |
High speed switching
6.0kV 200mA HIGH VOLTAGE DIODE
|
getedz electronics
GETAI ELECTRONICS DEVIC...
|
| RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
| 1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage High Speed Switching Applications
|
TOSHIBA
|
