| PART |
Description |
Maker |
| ADN3000-06 |
6.144 Gbps Transimpedance Amplifier with Integrated Photodiode
|
Analog Devices
|
| AK632256AWG-12 |
262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory 262,144 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| AK4864G AK4864S AK4864W AK4864Z AK69256S AK688192Z |
262,144 X 8 Bit MOS Dynamic Random Access Memory 262,144 × 8位马鞍山动态随机存取存储器
|
Accutek Microcircuit Corporation
Accutek Microcircuit, Corp.
|
| SPS-4120ARWG SPS-4120BRWG |
6.144 Gbps / 1310 nm / 20 km Digital Diagnostic Multi-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| V29C51002B-55J V29C51002T-55T V29C51002B-55T V29C5 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 85伏的CMOS闪存
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| UPD16664 |
144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM 144/160/184/208-OUTPUT液晶柱段驱动与RAM
|
NEC, Corp.
|
| AT25F2048 AT25F2048N AT25F2048N-10SU-2.7 |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
SPI Serial Memory 2M (262,144 x 8)
SPI Serial Memory 2M (262/144 x 8)
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M57726R 57726R |
144-148MHz 12.5V /43W /FM MOBILE RADIO
144-148MHz 12.5V,43W,FM MOBILE RADIO
144-148MHZ, 12.5V, 43W, FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| YQM0505-FEC YCMPB0507-FEC YCMPB0406-FEC |
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/Case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:576; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
MAX 3000A CPLD 256 MC 144-TQFP
Stratix II FPGA 180K FBGA-1020 连接5MM/PG29
|
TE Connectivity, Ltd.
|
| IS28F200BVB-120TI IS28F200BVT-120TI IS28F200BVB-80 |
CRYSTAL 9.8304MHZ 20PF HC-49/UA
G1 802.15.4 2.4GHZ 256K X 8 FLASH 5V PROM, 60 ns, PDSO48
SIP 802.15.4 2.4GHZ 16KB 256K X 8 FLASH 5V PROM, 80 ns, PDSO48
131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY 256K X 8 FLASH 5V PROM, 60 ns, PDSO48
131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY 131,072 x二百六十二分之十六，144 × 8 SmartVoltage引导块闪
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
