| PART |
Description |
Maker |
| EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 |
4M x 16 DDR Synchronous DRAM (SDRAM)
|
ETRON[Etron Technology, Inc.]
ETRON[Etron Technology Inc.]
|
| NT5DS16M16CS NT5DS16M16CS-5T NT5DS16M16CS-6K NT5DS |
256Mb DDR Synchronous DRAM
|
NanoAmp Solutions, Inc.
|
| EM6A9160TSA-5G |
8M x 16 DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| EM68916DVAA-6H EM68916DVAA-75H |
8M x 16 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| IS43R16320D-5TL IS43R32160D-5BL IS46R16320D-6TLA1 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
16M X 32 DDR DRAM, 0.7 ns, PBGA144
|
INTEGRATED SILICON SOLUTION INC
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
26615150 DDR SDRAM的注册模
DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 |
1Gb DDR2 SDRAM
256M X 4 DDR DRAM, PBGA60
128M X 8 DDR DRAM, PBGA60
|
http://
HYNIX SEMICONDUCTOR INC
|
| V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
