| PART |
Description |
Maker |
| MC-4516CA726PF-A10 MC-4516CA726PF-A80 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-45V16AD642KS-A75 MC-45V16AD642KS |
16M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
| HYM72V1620GS-50 HYM72V1620GS-50- HYM72V1620GS-60 H |
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
16M x 72-Bit Dynamic RAM Module (ECC - Module )
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MC-4516CB647EF-A75 MC-4516CB647PF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-4516CA726XF-A10 MC-4516CA726PF-A10 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-42S8LFF64S |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压3.4V的DRAM模块)
|
NEC Corp.
|
| TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No
4,194,304 WORD x BIT DYNAMIC RAM
4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块)
From old datasheet system
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MD56V62400H MD56V62400 |
4-Bank x 4194304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic components
OKI[OKI electronic componets]
|
| HM5216808/5216408C HM5216808CTT-80 |
1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
x8 SDRAM x8 SDRAM内存
|
Hitachi,Ltd.
|
