| PART |
Description |
Maker |
| BAS16 BAS16/T1 BAS16W/T1 |
DIODE KLEINSIGNAL SMD 贴片二极管KLEINSIGNAL
CY7C603xx Wireless; Memory Size: 8K; RAM: 512B; Vcc (V): 2.4-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3656 二极管采用SOT 323 SCHALT
High-speed diode
|
Won-Top Electronics Co., Ltd.
Philips Semiconductors
NXP Semiconductors
|
| PM7325-TC |
S/UNI-ATLAS-3200 Telecom Standard Product Data Sheet Preliminary S/UNI-ATLAS-3200电信标准产品数据的初
|
PMC-Sierra, Inc.
|
| R15KP20 R15KP200A R15KP200C R15KP100 R15KP100A R15 |
TRANSIENT VOLTAGE SUPPRESSORS
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 51V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| K1S321611C K1S321611C-FI70 K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
SAMSUNG[Samsung semiconductor]
|
| K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K1B3216BDD |
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
SAMSUNG ELECTRONICS
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| 3SMC6.5A 3SMC7.0A 3SMC9.0A |
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
|
Central Semiconductor Corp.
|
| CMST3904 CMST3906 |
SMD Small Signal Transistor PNP General Purpose Amplifier/Switch
SMD Small Signal Transistor NPN General Purpose Amplifier/Switch
SURFACE MOUNT SUPERmini COMPLEMENTARY SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 11LC080-ECS16K 11LC080-EMNY 11LC080-EMS 11LC080-EP |
1K-16K UNI/O Serial EEPROM Family Data Sheet
1K-16K UNI/O? Serial EEPROM Family Data Sheet
1K-16K UNI/O庐 Serial EEPROM Family Data Sheet
1K-16K UNI/O垄莽 Serial EEPROM Family Data Sheet
|
Microchip Technology Inc.
|
| 11LC080 11LC080-E_MNY 11LC080-E_MS 11LC080-E_P 11L |
1K-16K UNI/O垄莽 Serial EEPROM Family Data Sheet
1K-16K UNI/O庐 Serial EEPROM Family Data Sheet
1K-16K UNI/O? Serial EEPROM Family Data Sheet
|
Microchip Technology
|
