| PART |
Description |
Maker |
| GM71V18163CJ-6E |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Hynix Semiconductor, Inc.
|
| UPD42S4210ALE-50 UPD424210AG5-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
| HY512264JC-70 HY512264JC-60 HY512264SLJC-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
DB Lectro, Inc.
|
| GM71V18160CJ-7 GM71V18160CT-6 |
x16 Fast Page Mode DRAM
|
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
| IC41C1665 IS41LV1665 IS41LV1665-40K IC41LV1665 IC4 |
RES 100 OHM 5% 1/3W R1210
64K x16 bit Dynamic RAM with Fast Page Mode 64K的x16位动态随机存储器和快速页面模
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
TE Connectivity, Ltd.
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
