| PART |
Description |
Maker |
| FLL21E010MK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| TC1606N |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1706 |
3 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| KIT5003A |
high prefomance transmissive type photo interrupter, combines high-output GaAs IRED with high sensitive phototransistor.
|
KODENSHI KOREA CORP.
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| VHV12-2.0K1000P VHV12-2.0K1000N |
Ultra small size adjustable output type high voltage power supply 2W to 2.6W high voltage DC-DC converter
|
Volgen Kaga Electronics...
|
| 2SC2928 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| BFN22 Q62702-F1024 Q62702-F102 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
