| PART |
Description |
Maker |
| 2SD1061 2SB825 2SB825Q |
50V/7A Switching Applications 50V/7A开关应
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五（巴西）总裁| 3A条一（c）|52
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SC945 2SA812 NTC2517 2SC2001 NTC2751 NTC2654 2SC1 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-92
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-23VAR
Transistor - Datasheet Reference
TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),TO-92
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-236VAR
From old datasheet system
|
NEC Electron Devices
|
| 2DC4617QLP-7B 2DC.617QLP-7 2DC.617QLP11 2DC4617QLP |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| 2SB1443 2SA1797 A5800341 2SC4672T100P 2SC4672T100Q |
Power Transistor (-50V/ -2A)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Power Transistor (-50V, -2A)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-243
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|43
|
Rohm Co., Ltd.
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| DTA123YCA DTA123YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA113ZCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| UMA9N FMA9 FMA9A FMA9N |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
Digital transistor (Common Emitter Dual Transistors)
|
Rohm CO.,LTD.
Microsemi Corporation
ROHM[Rohm]
|
