| PART |
Description |
Maker |
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| CY14B104LA |
4-Mbit (512 K X 8/256 K X 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B104NA-BA25IT |
4-Mbit (512 K x 8/256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| M29W400DT07 M29W400DB55M1 M29W400DB55M1E M29W400DB |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| S29GL256N |
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
|
Cypress Semiconductor
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| CY7C425-65PC CY7C425-25VI CY7C429-25JI CY7C421-65J |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 25 ns, PDSO28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 30 ns, PDSO28
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
