| PART |
Description |
Maker |
| 2SC945 2SA812 NTC2517 2SC2001 NTC2751 NTC2654 2SC1 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-92
TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-23VAR
Transistor - Datasheet Reference
TRANSISTOR,BJT,NPN,25V V(BR)CEO,700MA I(C),TO-92
TRANSISTOR,BJT,NPN,50V V(BR)CEO,100MA I(C),TO-236VAR
From old datasheet system
|
NEC Electron Devices
|
| DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | SIP
晶体管| 50V五（巴西）总裁| 100mA的一c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一c）|的SOT - 23VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁|提供70mA一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 23VAR
|
FCI
Analog Devices, Inc.
Rohm Co., Ltd.
TE Connectivity, Ltd.
Diodes, Inc.
Kingbright, Corp.
|
| 2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|园区
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五（巴西）总裁| 5A条一（c）|园区
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|园区
晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|律师- 71
5个引#181;带看门狗和手动复位的P监控电路
晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）|园区
晶体管|晶体管|叩| 20V的五（巴西）总裁| 1A条一（c）|律师- 71
晶体管|晶体管|叩| 400V五（巴西）总裁| 100mA的一（c）|律师- 71
晶体管|晶体管|叩| 25V的五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 2SB892 2SD1207 2SB892S 2SD1207S 2SD1207T |
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|2VAR
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-92VAR
Large-Current Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 1507-100A 1507-200A 1507-200B 1507-200C 1507-300G |
CAP POLYPROPYLENE .0051UF 50V 1% 单在行延迟线
CAP .00056UF 50V POLYPROPYLENE 单在行延迟线
Single-In-Line Delay Lines 单在行延迟线
CAP POLYPROPYLENE .47UF 50V 1%
CAP POLYPROPYLENE .051UF 50V 1%
.00056 UFD POLYPROPYLENE CAP
CAP POLYPROPYLENE .47UF 50V 2%
CAP POLYPROPYLENE .047UF 50V 2%
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 4608H-701-332/472 4608H-701-332/272 4608H-701-332/ |
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0027uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 100000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 82ohm, 50V, 0.00012uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 82ohm, 50V, 0.00022uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 390000ohm, 50V, 0.027uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 1500ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 10000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 330ohm, 50V, 0.0001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 33ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 1200ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-9
Thick Film Resistor Network; Series:4600X; Resistance:22ohm; Resistance Tolerance: 5, - 20%; Power Rating:1.13W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:100VDC RoHS Compliant: No
RC NETWORK, BUSSED, 100000ohm, 50V, 0.0039uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33000ohm, 50V, 0.001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00068uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100000ohm, 50V, 0.033uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 330ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-9
|
Bourns, Inc.
BOURNS INC
|
| PBSS4350T PBSS4350T_1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-23 晶体| BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-23
From old datasheet system
50 V low VCEsat NPN transistor
|
Global Mixed-mode Technology, Inc.
Philips
|
| DTA114YCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA113ZCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
|
