| PART |
Description |
Maker |
| ERJP03D27R0V ERJP03D1131V ERJP08D4020V ERJP08D4021 |
Anti-Surge Small & High Power Thick Film Chip Resistors
|
Panasonic
|
| BDP951 BDP953 BDP955 BDP95 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages
Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Through Hole; Polarization:Unipolar; Power
|
Infineon Technologies AG
|
| ERG3DJW564E ERG2DJW434E ERG12DJW124E ERG12DJW134E |
Leaded, Anti-Pulse Power Resistors
|
Panasonic
|
| ESR18EZPFD ESR18EZPFF ESR18EZPFJ ESR18EZPJJ ESR18E |
Anti-surge Chip Resistors
|
Rohm
|
| ESR25JZPD ESR25JZPF ESR25JZPJ |
Anti-surge thick film chip resistor
|
Rohm
|
| ESR25JZPD |
Anti-surge thick film chip resistor
|
Rohm CO.,LTD.
|
| BD139-25 BD135-25 BD137-25 |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|126
|
HIROSE ELECTRIC Co., Ltd.
|
| KP10LU07 |
Surge Protectors / Thyristor Surge Suppressors (Uni-directional type, Surface Mount)
|
Shindengen
|
| NT90THLASAC12VCB0.6 NT90THLASAC12VCB0.9 NT90TNLASA |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life.
|
http://
DB Lectro Inc.
DBLECTRO[DB Lectro Inc]
|
| BCR12KM-14 |
Silver Mica Capacitor; Capacitance:3pF; Capacitance Tolerance: /- 0.5pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| ZB2BL4 ZB2BL2 ZB2BV6 ZB2BV3 ZB2BS54 ZB2BW84354 ZB2 |
CONTROL AND SIGNALLING UNITS
DIODE TVS 75V 600W BIDIR 5% SMB
DIODE TVS 36V 600W BI-DIR SMB 指示灯头
传奇\u0026#39;紧急停止\u0026#39;
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:13V; Breakdown Voltage, Vbr:14.4V; Package/Case:DO-214; Leaded Process Compatible
LEGEND PLATE B>1-11
DIODE TVS 9.0V 600W UNI 5% SMB
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:30V; Breakdown Voltage, Vbr:33.3V; Peak Pulse Power PPK @ 10x1000uS:600W; Package
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:51V; Breakdown Voltage, Vbr:56.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:18V; Breakdown Voltage, Vbr:20V; Peak Pulse Power PPK @ 10x1000uS:600W; Package
Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Surface Mount; Polarization:Bipolar; Power Rating:600W; Type:TVS-Bidirectional; Voltage Rating:22V
|
List of Unclassifed Man...
Square D by Schneider Electric
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
