| PART |
Description |
Maker |
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
| PTVA047002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA261301E PTFA261301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Infineon Technologies A...
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
|
