| PART |
Description |
Maker |
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| M29W128GH M29W128GL |
128 Mbit 3V Supply Flash Memory
|
Numonyx
|
| M36L0R7050L1ZAMF M36L0R7060U1 M36L0R7060U1ZAME M36 |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
|
STMicroelectronics
|
| M29W128GH M29W128GH60N6E M29W128GH60N6F M29W128GH6 |
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
|
Numonyx B.V
|
| M58WR128FB M58WR128FB60ZB6F |
128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位（复用的I / O，多银行，多层次，多突发）快闪记忆体264兆移动存储芯片，1.8V电源多芯片封
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位（复用的I / O，多银行，多层次，多突发）快闪记忆体24兆移动存储芯片，1.8V电源多芯片封
|
意法半导
STMicroelectronics N.V.
|
| M30LW128D110N1T M30LW128D110ZA1T M30LW128D110N6T M |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128KC785 M58LR256KC785 M58LR256KC M58LR256KC7 |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M29DW128F_06 M29DW128F M29DW128F60NF1 M29DW128F60N |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW128F M29DW128F60NF1 M29DW128F60NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位6Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
