| PART |
Description |
Maker |
| MBM29PL160BD-90 MBM29PL160BD-90PF MBM29PL160BD-90P |
PAGE MODE FLASH MEMORY 16M (2M x 8/1M x 16) BIT
|
Fujitsu Microelectronics
|
| ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V.
Allegro MicroSystems
STMICROELECTRONICS[STMicroelectronics]
|
| S29GL256N10TAIV12 S29GL128N10TAI022 S29GL128N11TAI |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
|
| S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| MB84VD21181-85-PBS MB84VD21181-85-PTS MB84VD21191- |
16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| EN29GL256H EN29GL256H-90ZIP EN29GL256L-90BAIP EN29 |
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| W764M32V120SB W764M32V100SB W764M32V-XSBX W764M32V |
64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory
|
WEDC[White Electronic Designs Corporation]
|
| AT49SN6416T AT49SN3208T AT49SN6416T-90CJ |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory
4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
|
ATMEL CORP
|
| EN71PL032A0-70CWP EN71PL032A01 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
