| PART |
Description |
Maker |
| HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| HYS64D128320HU-5-C HYS72D128320HU-5-C HYS64D64300H |
184-Pin Unbuffered Double Data Rate SDRAM 128M X 64 DDR DRAM MODULE, 0.5 ns, DMA184
184-Pin Unbuffered Double Data Rate SDRAM 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG
|
| V826632G24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| HYMD564646BXX |
184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver
|
Hynix Semiconductor
|
| 2SB941Q 2SB941P 2SB941AQ 2SB941R 2SB941AR |
3-Pin, Ultra-Low-Power SC70/SOT23 Voltage Detectors
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|的SOT - 186
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | SOT-186 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 3A条一（c）|的SOT - 186
|
Panasonic, Corp.
Fairchild Semiconductor, Corp.
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| HYMD216M646C6-H HYMD216M646C6-J HYMD216M646C6-K HY |
Unbuffered DDR SO-DIMM
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| EBD25UC8AMFA-6B EBD25UC8AMFA |
256MB Unbuffered DDR SDRAM DIMM
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
|
| HYMD132725B8-H HYMD132725B8-K HYMD132725B8-L HYMD1 |
DDR SDRAM - Unbuffered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| HYMD116645BL8J HYMD116645B8J HYMD116645B8J-J HYMD1 |
16Mx64|2.5V|J|x8|DDR SDRAM - Unbuffered DIMM 128MB
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
