| PART |
Description |
Maker |
| CAT28C257 CAT28C257HN-12 CAT28C257PI-90T CAT28C257 |
256K CMOS parallel EEPROM 90ns
256K CMOS parallel EEPROM 150ns
256K CMOS parallel EEPROM 120ns
256K-Bit CMOS PARALLEL E2PROM
|
http://
CATALYST[Catalyst Semiconductor]
|
| 27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM
256K (32K x 8) CMOS EPROM 256K2K的8）的CMOS存储
DIODE SCHOTTKY 150V 60A TO247AC
CAPACITOR 1500UF 80V ELECT TSHA
CAP 270UF 400V ELECT TS-ED
From old datasheet system
256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns
256K-bit CMOS parallel EEPROM 200ns
256K-bit CMOS parallel EEPROM 300ns
256K-Bit CMOS PARALLEL E2PROM
128Kx8 EEPROM 128Kx8 EEPROM
32K X 8 EEPROM 3V, 200 ns, PQCC32
|
http://
CATALYST[Catalyst Semiconductor]
Intersil, Corp.
Epson (China) Co., Ltd.
STMicroelectronics N.V.
ON SEMICONDUCTOR
|
| W29C020T-90 W29C020T-12 W29C020T-90A W29C020T-70B |
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
BOX 3.4X2.56X1.02 W/6 BTNS ALMOND 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
BOX 3.4X2.56X1.02 W/6 BTNS BLK 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
BOX 3.4X2.56X1.02 W/3 BTNS ALMOND
BOX 2.53X1.73X.65 W/2 BTNS BLK
256K X 8 CMOS FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641001A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
