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2N2574 - 2N2574 ~ 2N2578 / SILICON CONTROLLED RECTIFIERS

2N2574_2674585.PDF Datasheet


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IRFN140SMD ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))
TT electronics Semelab, Ltd.
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IRF9130SMD P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
SML100W18 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
SemeLAB
SEME-LAB[Seme LAB]
0533980467 0533980267 0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
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APT1101RSFLL Volts:1100V RDS(ON)1Ohms ID(cont):13Amps|FREDFETs ( fast body diode)

APT5024SLL APT5024BLL Volts:500V RDS(ON):0.24Ohms ID(cont:)22Amps|MOSFETs 电压00V电压的RDS(ON):0.24Ohms编号(续:)22安培| MOSFET
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MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
VISAY[Vishay Siliconix]
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