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CYM9288APZ-60C - x72 Selectable Burst Mode SRAM Module

CYM9288APZ-60C_2615394.PDF Datasheet


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MT9LD272G-5B MT18LD472G-5B MT9LD272G-5BN MT9LD272G x72 Burst EDO Page Mode DRAM Module x72脉冲EDO页面模式内存模块
Fujitsu, Ltd.
IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100
High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100
Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100
Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
IDT
Integrated Device Technology, Inc.
SRAM
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
MT9LD272G-7S MT9LDT272G-7 MT9LDT272G-7XS MT9LD272G x72 Fast Page Mode DRAM Module
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Unisonic Technologies Co., Ltd.
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Analog Devices, Inc.
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Micron Technology, Inc.
AS7C33256PFS18B AS7C33256PFS18BV.1.7 AS7C33256PFS1 3.3V 256K X 18 pipeline burst synchronous SRAM 3.3 256 × 18管道爆裂同步SRAM
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Sync SRAM - 3.3V
From old datasheet system
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 100MHz 12ns 128K x 32 4Mb sync burst SRAM
150MHz 10ns 128K x 32 4Mb sync burst SRAM
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GSI Technology
CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
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Cypress Semiconductor, Corp.
AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A 2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 2.5V的为512k × 32/36管线爆裂同步SRAM
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.5 ns, PQFP100
Sync SRAM - 2.5V
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor Corp...
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP Memory>Fast SRAM>QDR SRAM
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Renesas Technology / Hitachi Semiconductor
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Renesas Technology / Hitachi Semiconductor
 
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