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MC-42S4LFG64S - 3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)

MC-42S4LFG64S_2575143.PDF Datasheet
 Full text search : 3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
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 Related Part Number
PART Description Maker
MC-42S4LFG64S 3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
 NEC Corp.
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MR26V25605J MR26V25605J-XXXMB 8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
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 MITSUBISHI[Mitsubishi Electric Semiconductor]
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
 NEC
MR27V12852R MR27V12852L 8M-Word × 16-Bit or 16M-Word × 8-Bit Page mode P2ROM
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MR27V25603L-XXXTME MR27V25603L MR27V25603L-XXXTM 16M-Word x 16-Bit or 32M-Word x 8-Bit P2ROM
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PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD4618 18M-BIT DDR II SRAM 4-WORD BURST OPERATION
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MBM29DL161BE-70PBT MBM29DL16XTE70 MBM29DL161BE-70T FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
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SPANSION[SPANSION]
UPD29F064115F9-CD5 UPD29F064115GZ-MJH UPD29F064115 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE
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UPD44165084 UPD44165084F5-E60-EQ1 UPD44165364F5-E6 18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM4个字爆发运作
18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM个字爆发运作
 NEC Corp.
NEC, Corp.
 
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