| PART |
Description |
Maker |
| BUK437-400A |
(BUK437-400A/B) Power MOS Transistor
|
Philips
|
| CD13003 |
45.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 5 - 25 hFE.
|
Continental Device India Limited
|
| EV200HRANA |
POWER/SIGNAL RELAY, SPST, MOMENTARY, 28VDC (COIL), 500A (CONTACT), PANEL MOUNT
|
|
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| APT5024AVR |
POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8065 APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
