| PART |
Description |
Maker |
| 2SA839 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
Unknow
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA493 2SA493-GR 2SA493-Y |
PNP transistor for low noise audio amplifier applications
From old datasheet system
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
TOSHIBA
ETC[ETC]
List of Unclassifed Manufacturers
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| STK621-041 |
TENTATIVE
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| RT8H042C |
This is tentative specification
|
Isahaya Electronics Corporation
|
| P0340WQLC-T |
Tentative Product Specification
|
AZ Displays
|
| G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
| 1MBI150SH-140 |
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Tentative target specification
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
