| PART |
Description |
Maker |
| MCR100-D MCR100-3 |
0.8 A, 100 V, SCR, TO-226AA
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR106-6 MCR106-8 MCR106-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate Silicon Controlled Rectifiers
|
ON Semiconductor
|
| MM1Z2V0 |
0.5W SILLICON PLANAR ZENER DIODES
|
Gaomi Xinghe Electronics Co., Ltd.
|
| 20KDA20 |
Diffusion-type Sillicon Rectifier Diode
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| 1SS350 |
Sillicon Epitaxial Schottky Barrier Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| SA08A4C |
Sillicon Controlled Rectifiers Thyristors 0.8A Mold SCR
|
Korea Electronics (KEC)
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
| SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB]
SemeLAB
|
| 0545480570 0545480870 0545482070 0545481070 54548- |
0.5 FPC CONN ZIF HSG ASSY FOR SMT RA BTM CONT -LEAD FREE-
|
Molex Electronics Ltd.
|
| AS3834 AS3834-ZSOT AS3834-ZTQT |
4 channel high-precision LED cont rol ler for 3D-LCD backl ight wi th
|
ams AG
|
